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RP1E100RP
　
Data Sheet
100
Ta=25 ℃
Pulsed
I D = -10.0A
10000
1000
td(off)
tf
Ta=25 ℃
V DD = -15V
V GS = -10V
R G =10 ?
Pulsed
10
8
6
Ta=25 ℃
V DD = -15V
I D = -10A
R G =10 ?
Pulsed
50
I D = -5.0A
100
4
0
10
1
tr
td(on)
2
0
0
5
10
15
0.01
0.1
1
10
100
0
10
20
30
40
50
60
70
GATE-SOURCE VOLTAGE : ?? V GS [V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
10000
1000
DRAIN-CURRENT : ? I D [A]
Fig.11 Switching
Characteristics
Operation in this area is limited by
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
1000
100
Ciss
Crss
Coss
100
10
1
R DS (ON)
PW=100 ? s
PW=1ms
PW = 10ms
10
Ta=25 ℃
f=1MHz
V GS =0V
0.1
0.01
Ta = 25 ℃
Single Pulse
Mounted 　 on a 　 CERAMIC board
DC operation
0.01
0.1
1
10
100
0.1
1
10
100
10
1
0.1
DRAIN-SOURCE VOLTAGE : ? V DS [V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Ta = 25 ℃
Single Pulse : 1Unit
DRAIN-SOURCE VOLTAGE : ? V DS [V]
Fig.14 Maximum Safe Operating Aera
0.01
Rth （ ch-a ）（ t ） = ｒ（ t ） ×Rth （ ch-a ）
Rth （ ch-a ） = 62.5 ℃ /W
<Mounted on a CERAMIC board>
0.001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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?20 10 ROHM Co., Ltd. All rights reserved.
4/5
2010.07 - Rev.B
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